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Efficient and Stable Solution-Processed Organic Light-Emitting Transistors Using a High.k Dielectric
——高效稳定的解决方案-使用高介电常数的有机发光晶体管
Sungho Nam, Mujeeb Ullah Chaudhry, Kornelius Tetzner, Christopher Pearson, Chris Groves, Michael C. Petty, Thomas D. Anthopoulos, and Donal D. C. Bradley
ACS Photonics (2019)
https://doi.org/10.1021/acsphotonics.9b01265
Abstract
We report the development of highly efficient and stable solution-processed organic light-emitting transistors (OLETs) that combine a polymer heterostructure with the transparent high-k dielectric poly(vinylidenefluoride0.62-trifluoroethylene0.31-chlorotrifluoroethylene0.7) (P(VDF-TrFE-CTFE)). The polymer heterostructure comprises of poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b’]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT) and Super Yellow as charge-transporting and light-emitting layers, respectively. Device characterization shows that the use of P(VDF-TrFE-CTFE) leads to larger channel currents (≈2 mA) and lower operating voltages (−35 V) than for previously reported polymer based OLETs. Furthermore, the combined transparency of the dielectric and gate electrode, results in efficient bottom emission with external quantum efficiency of ≈0.88% at a luminance L ≥ 2000 cd m–2. Importantly, the resulting OLETs exhibit excellent shelf life and operational stability. The present work represents a significant step forward in the pursuit of all-solution-processed OLET technology for lighting and display applications.
本篇文章采用paios多功能载流子特性分析系统测量和分析数据,paios专用于太阳能电池瞬态光电特性及载流子特性的深入研究与分析;可对OPV太阳能电池、PVK钙钛矿太阳能电池、OLED器件和其他半导体器件中的载流子迁移率进行有效的分析和测量
测试功能:载流子迁移率 载流子寿命 串联电阻 复合效率 陷阱密度 介电常数
电荷注入势垒 陷阱深度 内建电场 几何电容 掺杂密度 发射寿命 PV光电转化效率(最大功率点Pmax、FF、Voc、IscVS光强)
测试模式:IV曲线,IVL曲线,TPC瞬态光电流,TPV瞬态光电压,Photo-CELIV线性增压载流子抽取,CE载流子抽取,IMPS调制光电流谱,IMVS调制光电压谱,IS阻抗谱,C-V电容-电压,DIT暗注入,EQE外量子效率,TEL瞬态光致发光等;
应用领域:无机半导体材料 有机太阳能电池OPV 钙钛矿太阳能电池(Perovskite Solar Cell) 燃料敏化太阳能电池 无机太阳能电池(硅基太阳能电池) 有机半导体材料(OLED)
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