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Approaching the Shockley–Queisser limit for fill factors in lead–tin mixed perovskite photovoltaics K. D. G. I. Jayawardena, R. M. I. Bandara, M. Monti,b E. Butler-Caddle,b T. Pichler, H. Shiozawa, Z. Wang, S. Jenatsch, S. J. Hinder, M. G. Masteghin, M. Patel, H. M. Thirimanne, W. Zhang, R. A. Sporea, J. Lloyd-Hughes and S. R. P. Silva J. Mater. Chem. A 2020 https://pubs.rsc.org/en/Content/ArticleLanding/2020/TA/C9TA10543C#!divAbstract
Abstract: The performance of all solar cells is dictated by charge recombination. A closer to ideal recombination dynamics results in improved performances, with fill factors approaching the limits based on Shockley–Queisser analysis. It is well known that for emerging solar materials such as perovskites, there are several challenges that need to be overcome to achieve high fill factors, particularly for large area lead–tin mixed perovskite solar cells. Here we demonstrate a strategy towards achieving fill factors above 80% through post-treatment of a lead–tin mixed perovskite absorber with guanidinium bromide for devices with an active area of 0.43 cm2. This bromide post-treatment results in a more favorable band alignment at the anode and cathode interfaces, enabling better bipolar extraction. The resulting devices demonstrate an exceptional fill factor of 83%, approaching the Shockley–Queisser limit, resulting in a power conversion efficiency of 14.4% for large area devices.
本篇文章采用paios多功能载流子特性分析系统及IV测量和分析数据,paios专用于太阳能电池瞬态光电特性及载流子特性的深入研究与分析;可对OPV太阳能电池、PVK钙钛矿太阳能电池、OLED器件和其他半导体器件中的载流子迁移率进行有效的分析和测量
测试功能:载流子迁移率 载流子寿命 串联电阻 复合效率 陷阱密度 介电常数
测试模式:IV曲线,IVL曲线,TPC瞬态光电流,TPV瞬态光电压,Photo-CELIV线性增压载流子抽取,CE载流子抽取,IMPS调制光电流谱,IMVS调制光电压谱,IS阻抗谱,C-V电容-电压,DIT暗注入,EQE外量子效率,TEL瞬态光致发光等;
应用领域:无机半导体材料 有机太阳能电池OPV
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